Display apparatus having an electric shielding wire and method for manufacturing the same

ABSTRACT

An electric shielding wire made of Cr is provided near the edge of a substrate, in which the electric shielding wire is a lower electric layer for an TFT element. Because countermeasures against static electricity are taken at an early manufacturing stage of the substrate, the elements formed on the substrate are protected against damage due to static electricity generated in subsequent stages. The electricity shielding wire is ultimately used as a pedestal for a wire. With this arrangement, characteristics of various elements of a driver-integrated LCD are protected against deterioration due to static electricity generated in a manufacturing process.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a liquid crystal display (LCD) and to amethod for manufacturing such LCDs, and in particular to a peripheraldriving circuit integrated LCD in which a thin film transistor (TFT) isused as a switching element in a display area and a driving circuit isformed around the display area, and a method for manufacturing the same.The manufacturing method of this invention prevents dielectric breakdownof an element due to static electricity generated in the manufacturingprocess.

2. Description of the Related Art

LCDs are commonly employed in office automation and audio visualapparatuses because of their advantageously small size, thin shape, andlow power consumption. In particular, active matrix LCDs employing a TFTfor a switching element to control writing of pixel information intopixels, are used for displays of various television sets or personalcomputers as they can precisely display motion pictures on a largescreen.

A TFT is a field effect transistor (FET) made by forming metallic andsemiconductor layers of a predetermined shape on a insulating substrate.In an active matrix LCD, the TFT is connected to the pixel electrodesfor driving liquid crystal. Note that a common electrode, a pixelelectrode, and liquid crystal sandwiched by these, together constitute acapacitor which corresponds to one pixel.

In recent years, an LCD has been developed which employs polysilicon(p-si) for the semiconductor layer, instead of amorphous silicon whichwas mainly used. Laser light is used to anneal, form, and grow p-Sicrystal. In general, p-Si is superior in carrier movability to a-Si, andachieves TFT size reduction which enables formation of a highly precise,fine LCD with a higher opening rate. Moreover, when a gate self-alignstructure enables formation of a fine structure, and reduced parasiticcapacitance enables high-speed processing, it is possible to form a highspeed driving circuit through employment of an electric complementarystructure which uses an n-ch TFT and a p-Ch TFT, i.e., CMOS. Thisfurther allows formation of a driving circuit around a pixel area on thesame substrate, so that manufacturing costs and the size of an LCDmodule can be reduced.

Referring to FIG. 11, which is a plan view of a mother substrate 1 ofthe aforementioned driver-integrated LCD, the mother substrate 1includes four active matrix substrates 2 which constitute electrodesubstrates of LCDs on one. On each active matrix substrate 2, respectiveareas are reserved for formation of a display area at the center, gatedriver 40 on the left and right sides thereof, a drain driverthereabove, a precharge driver 6 therebelow, an input terminal area 7along the lower edge of the substrate 2. The input terminal area 7 isconnected to a flexible print connector (FPC), which is mounted with anintegrated circuit for generating a control signal to be supplied viathe FPC to the input terminal area 7.

From the input terminal area 7, a vertical clock pulse feeding wire 41and a vertical start pulse feeding wire 42 extend to the gate driver 4;a horizontal clock pulse feeding wire 51, a horizontal start pulsefeeding wire 52, and a video data feeding wire 53 extend to the draindriver 5; and a horizontal clock pulse feeding wire 61 and a horizontalstart pulse feeding wire 62 extend to the precharge driver 6.

After an opposing glass substrate is attached to the motor substrate 1,the substrate 1 is cut along the break line 8 into four sheets of activematrix panels. Note that the opposing glass substrate has commonelectrodes formed thereon correspond to the substantial area of eachactive matrix substrate.

Referring to FIG. 12 which is an enlarged plan view of an active matrixsubstrate 2, a display area 3 is formed such that horizontally extendinggate lines 31 intersect vertically extending drain lines 32, and aswitch element 33 is provided at each crossing, connected to the pixelelectrode for driving crystal liquid.

A gate driver 4 mainly comprises a shift register for supplying ascanning signal voltage to the gate lines 31 in response to a verticalclock pulse. A drain driver 5 mainly comprises a shift register and asampling gate for supplying a display signal voltage to the drain lines32 in response to a horizontal clock pulse.

A precharge driver 6, comprising mainly a shift register, is provided,when necessary, to supply the display signal voltage to the drain lines32 earlier than the drain driver 5 to eliminate residual voltage in thedrain lines 32 since previous scanning periods.

In the input terminal area 7, input terminals 71 are arrangedrespectively connected to the wires 41, 42, 51, 52, 53, 61, 62.

Each switch element 33 comprises, for example, a TFT, and all switchelements 33 in the same row are collectively turned on by a scanningsignal voltage, in synchronism with which the display signal voltage isapplied from the drain lines 32 to each pixel electrode 34. By using theapplied voltage as display information, permeability of liquid crystalin each pixel is controlled so as to display an image using bright anddark pixels.

A driver for the aforementioned driver-integrated LCD is made by forminga p-Si (polysilicon) TFT on a substrate. That is, a CMOS is formed usinga pair of TFTs each having the same structure as that of a TFT used fora switch element 33 in the display area so that a number of invertercircuits are formed on a single substrate, forming respective drivers 4,5, 6.

Referring to FIG. 13, which is a cross sectional view of major elementsof the aforementioned active matrix substrate 2, from left to right inthe drawing are shown a TFT area, a wire 41, 42, 52, 52, 53, 61, 61area, and an input terminal 71. On a glass substrate 100, a gateelectrode 101 and an input terminal pedestal 121 are formed as a firstconductive layer made of Cr or the like. Above them, a gate insulatingfilm 102, a p-Si film 103, an injection stopper 104, an interlayerinsulating film 105, a source electrode 106, a drain electrode 107, awire 116, an input terminal 126, a flattening insulating film 108, apixel electrode 109, and an input terminal contact film 129 are formed.The source electrode 106, the drain electrode 107, the wire 116, and theinput terminal 126 are made of Al or the like to serve as a secondconductive layer; the pixel electrode 109 and the input terminal contactfilm 129 are made of indium tin oxide (ITO).

As can be seen from this drawing, the input terminal 71 has athree-layer structure including an input terminal pedestal 121, an inputterminal 126, and an input terminal contact film 129. The input terminal126, integrated with the wire 116, is made of a highly conductive Al orthe like, which, however, is inferior in property of attaching to thesubstrate 100. Therefore, an input terminal pedestal 121 made of Cr,which adheres well to both Al and glass, is provided as a base of theinput terminal 126 to ensure rigid adherence between the input terminal126 and the substrate 100.

Because anisotropy conductive resin used as an adhesive member with anFPC is not easily used with the input terminal 126, an input terminalcontact film 129 made of ITO is intervened so as to ensure betteradherence with the FTC.

First, a gate line 31, a gate electrode 101, and an input terminalpedestal 121 may be formed. That is, a gate electrode 101 for aswitching element and a gate line 31 integrated with the gate electrode101 are formed in the display area 3; a gate electrode 101 for a CMOSTFT and lower wires for wire bonding are formed in the driver areas 4,5, 6; and a pedestal 121 for an input terminal 71 is formed in the inputterminal area 7. A source electrode 106, a drain electrode 107, drainlines 32, and wires 41, 42, 51, 52, 53 are not yet formed.

As can be seen from the structure shown in FIG. 3, in manufacturing anactive matrix substrate, a lower electrode wire layer including a gateelectrode 101 and an input terminal pedestal 121 are formed at the firststage, followed by many stages at which a p-Si film 103 and variousinsulating films 102, 104, 106 are formed and etched and further bysubsequent stages at which an upper electrode wire layer including asource electrode 106, a drain electrode 107, and a wire 116, are formed.Through these stages, static electricity may be caused by friction withthe mother substrate 1, particularly near the edges of the substrate.Especially, if an island-shaped input terminal pedestal 121 is charged,charged electricity is discharged toward the surrounding metal.Specifically, referring to FIG. 11, for example, TFT elementsconstituting a precharge driver 6 and a drain driver 5 of the adjacentactive matrix substrate 2 are subject to the influence of the dischargedelectricity from the input terminal area 7 as they are positioned closeto the input terminal area 7, especially at a stage with a gateelectrode 101 formed. Discharged static electricity would deterioratethe element characteristics and cause dielectric breakdown, particularlyat a stage where a p-Si film 103 has been formed.

Drain drivers 5 on the upper active matrix substrates 2 in FIG. 11 arealso more likely affected by the static electricity as they arepositioned near the edge of the mother substrate 1, i.e., close to apart touched by a man's hand or a supporting section of a device.

SUMMARY OF THE INVENTION

The present invention has been conceived to with an aim of preventingdeterioration of element characteristics due to static electricitygenerated in manufacturing.

According to the present invention, a conductive section is formed fordischarging electricity, when forming a TFT so that the staticelectricity generated at the edges of a substrate is absorbed andshielded by the conductive section. With this arrangement, breakdown ofthe TFT due to static electricity is prevented.

Particularly, a conductive section formed near the edge of the substratecould effectively prevent the TFT from breakdown.

Further, the conductive section may preferably be formed as a part of awire arranged on the substrate. Also, an input terminal constructed toserve as a conductive section may be used to effectively prevent a TFTfrom breakdown due to static electricity even though the lower layer ofthe input terminal is charged with static electricity.

Still further, a conductive section formed on the mother substrate maybe used to prevent a TFT from breakdown due to static electricitygenerated in the mother substrate. Also, when an unnecessary conductivesection is disposed of, a finished display apparatus is not affected bythe conductive layer as it does not include the conductive layer.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features, and advantages, will becomefurther apparent from the following description of the preferredembodiment taken in conjunction with the accompanying drawings wherein:

FIG. 1 is a plan view showing a mother substrate of a display apparatusaccording to a first preferred embodiment of the present invention;

FIG. 2 is a plan view showing an active matrix substrate of a displayapparatus according to the first preferred embodiment of the presentinvention;

FIG. 3 is a cross sectional view showing significant portions of anactive matrix substrate display apparatus according to a first preferredembodiment of the present invention;

FIG. 4 is a plan view showing a mother substrate of a display apparatusaccording to a second preferred embodiment of the present invention;

FIG. 5 is a plan view showing a mother substrate of a display apparatusaccording to a third first preferred embodiment of the presentinvention;

FIG. 6 is a plan view showing a mother substrate of a display apparatusaccording to a fourth preferred embodiment of the present invention;

FIG. 7 is a plan view showing a mother substrate of a display apparatusaccording to a fifth preferred embodiment of the present invention;

FIG. 8 is a plan view showing a mother substrate of a display apparatusaccording to a sixth preferred embodiment of the present invention;

FIG. 9 is a plan view showing a mother substrate of a display apparatusaccording to a seventh preferred embodiment of the present invention;

FIG. 10 is a plan view showing a mother substrate of a display apparatusaccording to an eighth preferred embodiment of the present invention;

FIG. 11 is a plan view showing a mother substrate of a conventionaldisplay apparatus;

FIG. 12 is a plan view showing a active matrix substrate for aconventional display apparatus; and

FIG. 13 is a cross sectional view showing (major ?) part of a activematrix substrate for a conventional display apparatus.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 1 is a plan view showing a mother substrate 1 of adriver-integrated LCD according to a first preferred embodiment of thepresent invention. The mother substrate 1 includes two or more (four inthis figure) active matrix substrates 2 which serve as an electrodesubstrate of LCDs on one side. On each active matrix substrate 2,respective areas are reserved for formation of a display area 3 at thecenter, a gate driver 4 on the left and right sides thereof, a draindriver 5 above, a precharge driver 6 below, and an input terminal area 7along the lower edge of the substrate 2.

Referring to FIG. 2, which is an enlarged plan view showing each activematrix substrate 2, a display area 3 is formed such that horizontallyextending gate lines 31 intersect vertically extending drain lines 32,and a switch element 33 is provided at each crossing, connected to thepixel electrode 34.

The switch element 33 is a TFT. Each driver 4, 5, 6 has a CMOS structureincluding a TFT which is similarly structured as one for the switchelement 33.

At the input terminal area 7, input terminals 71 are arranged forreceiving signals such as a vertical clock pulse, a vertical startpulse, a horizontal clock pulse, a horizontal start pulse, a video datasignal, and the like. From the input terminals 7, a vertical clock pulsefeeding wire 41 and a vertical start pulse feeding wire 42 extend to thegate driver 4; a horizontal clock pulse feeding wire 51, a horizontalstart pulse feeding wire 52, and a video data feeding wire 53 extend tothe drain driver 5; and a horizontal clock pulse feeding wire 61 and ahorizontal start pulse feeding wire 62 extend to the precharge driver 6.

In this embodiment, at least one of the wires connected to the draindriver 5, namely, at least one of the horizontal clock pulse feedingwire 51, the horizontal start pulse feeding wire 52, and the video datafeeding wire 53, is arranged detouring around outside the drain driver5, and an electric shielding wire 10 is provided at least to the part ofthe video data feeding wire 43 which passes close to and outside thedrain driver 5 (indicated by a solid line in FIG. 1).

Referring to FIG. 3, which is a cross sectional view showing majorelements of the active matrix substrate 2, an TFT area, a wire 53 area,particularly a part thereof provided with an electric shielding wire 10,and an input terminal 71 area are shown from left to right of thedrawing.

On a glass substrate 100, a gate electrode 101, a wire pedestal 111, andan input terminal pedestal 121 are formed as a first conductive layermade of a material such as Cr or the like. The gate electrode 101 isformed integrated with a gate line 31. The wire pedestal 121 serves alsoas an electric shielding wire 10. Covering all of the above, a gateinsulating film 102 is formed.

In the TFT area, a p-Si film 103 is formed in an island-shape on thegate insulating film 102 above the gate electrode 101. The p-Si film 103constitutes a non-doped channel region (CH) at a part directly above thegate electrode 101, and a source region S and a drain region D withimpurities doped therein respectively at the left and right sides of theCH region. Further on the CH region, an injection stopper 104 is formedin a shape which is determined depending on the gate electrode 101. Theinjection stopper 104 serves as a mask in doping impurity ions. Coveringall of the above, an interlayer insulating film 105 is formed. Further,a source electrode 106 and a drain electrode 107 are formed as a secondconductive layer made of Al or the like such that they are respectivelyconnected to the source region S and the drain region D via a contacthole formed piercing the insulating film 105.

A wire 116 is formed on the interlayer insulating film 105 as a secondconductive layer made of Al or the like and the input terminal 126 ofthe wire 116 is formed connected to the input terminal pedestal 121 viaa contact hole formed piercing the interlayer insulating film 105, theinjection stopper 104, and the gate insulating film 102.

Further, in the TFT, wire, and input terminal areas, a flatteninginsulating film 108 is provided covering all of the layers mentionedabove.

Still further, in the TFT area, a pixel electrode 109 made of ITO isformed on the flattening insulating film 108 so as to be connected tothe source electrode 106 via a contact hole formed piercing theflattening insulating film 108.

In the input terminal area, an input terminal contact film 129 made ofITO is formed so as to be connected to the input terminal 126 via acontact hole formed piercing through the flattening insulating film 108.

A gate electrode 101, and a wire pedestal 111, and an input terminalpedestal 121 are first formed as a first conductive layer. At thisstage, since at least one of the wires, e.g., a video data feeding wires53, is to be arranged detouring around outside a region reserved for adrain driver 5, a wire pedestal 111 is formed on the substrate 2 atleast at a part thereof where the wire 43 is to be arranged passingclose to and outside the drain driver 5 so that the wire pedestal 111serves as an electric shielding wire 10. That is, when the wire 53 isfinally arranged, the wire 53 has a lamination structure comprising awire pedestal 111 and a wire 116, as shown in FIG. 3, at the partthereof passing close to and outside the drain driver 5.

If static electricity is generated to the mother substrate 1 at arelatively early stage of the manufacturing process, the input terminalarea 7 is particularly likely to be charged as is used for connectionwith the outside devices and thus generally provided along the edge ofthe active matrix substrate 2. Also, since the input terminal 7 isformed away from the precharge driver 6 in order to ensure a spacebetween them to form wires 41, 42, 51, 52, 53, 61, 62, the inputterminal 7 is resultantly positioned closer to the drain driver 5 of theadjacent active matrix substrate 2 than the precharge driver 6 of itsown substrate 2. Furthermore, misoperation of the drain driver 5 moregreatly effects deterioration of a displayed image than doesmisoperation of the precharge driver 6.

Static electricity tends to generate in the mother substrate 1 near itsedges due to contact with base supporting sections of various processingdevices and workers' hands in manufacturing or conveying process fromone to another manufacturing processes. Naturally, the drain driver 5,formed near the edge of the motor substrate 1, is likely to be affectedby static electricity.

Therefore, according to this invention, an electric shielding wire 10 isprovided at an early manufacturing stage at a porton of an active matrixsubstrate 2 outside the drain driver 5, i.e., a part between the draindriver 5 and the input terminal area 7 of the adjacent substrate 2. Withthis arrangement, static electricity generated in the input terminalarea 7 of the adjacent active matrix substrate 2 or the edge of its ownmother substrate 1 during a manufacturing process is absorbed by theelectric shielding wire 10 so that damage to the elements of the draindriver 5 due to static electricity can be prevented.

Despite the aforementioned structure, manufacturing costs do notincrease since electric shielding wire 10 can be formed at the same timewhen the gate line 31 is formed.

Note that this device is not limited to configurations where the videodata feeding wire 53 detours around outside the drain driver 5, and anyother lines 41, 42, 51, 52, 61, 62 may be thus arranged if possible orpreferable in terms of design layout.

The device is also not limited to configurations where it is the draindriver 5 that is protected by the electric shielding wire 10. With otherlayout arrangements of the display area 3, drivers 4, 5, 6, and an inputterminal area 7, any drivers, such as a gate driver 4 and a prechargedriver 6, which are arranged close to the input terminal area 7 of anadjacent active matrix substrate or at a part near the edge of its ownsubstrate, can be protected against breakdown due to static electricity1.

Referring to FIG. 4, which is a plan view showing a mother substrate 1of a driver-integrated LCD according to a second preferred embodiment ofthe present invention, similar to the first preferred embodiment, atleast one of the wires 41, 42, 51, 52, 53, 61, 62, for example, thevideo data feeding wire 53, is arranged to detour around outside thedrain driver 5. The difference from the first embodiment lies in thefact that the entire parts of the wires 41, 42, 51, 52, 53, 61, 62 areconstructed having a lamination structure, as shown in FIG. 1,comprising a wire 116 and a wire pedestal 111.

Therefore, an electric shielding wire 10 comprising a wire pedestal 111is formed corresponding to the entire part of the wires 41, 42, 51, 52,53, 61, 62. With this arrangement, static electricity, if generated atthe input terminal area 7 of the adjacent active matrix substrate 2 oranywhere near the edges of its own substrate 1, would be absorbed by theelectric shielding wire 10 and discharged through diffusion, to therebyprotect the gate driver 4, the precharge driver 6, the display area 3,and any other elements as well as the drain driver 5 on the mothersubstrate 1 against breakdown due to static electricity.

It should be noted that a modified arrangement of the above embodimentin which a video data feeding wire 53 arranged detouring around outsidethe drain driver 5, and the detouring part only, or substantially theentire portion thereof, is provided with an electric shielding wire 53can enhance the effect of preventing breakdown due to staticelectricity.

Also, another modification in which an electric shielding wire 10 isformed as a part of the wires 51, 52, 53, 41, 42, 61, 62 in regionswhere the wires 51, 52, 53, 41, 42, 61, 62 pass close to and outside thegate driver 4 and/or the precharge driver 6, and an electric shieldingwire 10 is formed as a part of the wires 41 and 41, 61 and 62 which arearranged detouring around outside the gate driver 4 and the prechargedriver 6, respectively, can protect the gate driver 4 and/or theprecharge driver 6 from breakdown due to static electricity generatednear the edges of the mother substrate 1.

Referring to FIG. 5, which is a plan view showing a mother substrate 1of a driver-integrated LCD according to a third preferred embodiment ofthe present invention, the video data feeding wire 53 and the horizontalclock pulse feeding wire 51 are arranged detouring around outside thedrain driver 5, and an electric shielding wire 10 is provided to thewires 51, 53 in at least a region where they pass close to the draindriver 5. With this arrangement, two electric shielding wires 10intervene between the drain driver 5 and the input terminal area 7 ofthe adjacent active matrix substrate 2, so that the drain driver 5 canbe more strongly protected from damage due to static electricity.

It should be noted that an electric shielding wire 10 may be provided tonot only the video data feeding wire 53 and the horizontal clock pulsefeeding wire 51, but also to any other lines 41, 42, 52, 61, 62 ifallowed in terms of design layout.

Alternatively, the electric shielding wire 10 may be provided to asubstantial or entire portion of the wires 41, 42, 51, 52, 53, 61, 62,or to only that portion passing close to and outside the gate driver 4and the precharge driver 6.

Referring to FIG. 6 which is a plan view showing a mother substrate 1 ofa driver-integrated LCD according to a fourth preferred embodiment ofthe present invention, an electric shielding wire 10 is provided closeto and outside the drain driver 5 independent of the wires 41, 42, 51,52, 53, 61, 62. This embodiment may be employed when the wire layoutcannot easily be changed, as the wires 41, 42, 51, 52, 53, 61, 62 neednot be arranged passing outside the drain driver 5 in this embodiment.

Alternatively, the electric shielding wire 10 may be arranged outsidethe gate driver 4 or the precharge driver 6.

Referring to FIG. 7 which is a plan view showing a mother substrate 1 ofa driver-integrated LCD according to a fifth preferred embodiment of thepresent invention, an electric shielding wire 10 is provided independentof the wires 41, 42, 51, 52, 53, 61, passing close to and outside thedrain driver 5, and also provided to a part of the video data feedingwire 53 passing close to and outside the drain driver 5. The resultantelectric shielding wires 10 are arranged passing close to andsubstantially outside the drain driver 5, so that the drain driver 5 canbe protected against static electricity generated in the input terminalarea 7 of the adjacent active matrix substrate 2, or at a part near theedges of its own mother substrate 1. Similar to the fourth embodiment,this embodiment may also be employed when the wire layout cannot beeasily changed.

Alternatively, an electricity shielding wire 10 may be provided to thesubstantial or entire part of the wires 41, 42, 51, 52, 53, 61, 62, oroutside the gate driver 4 and/or (?) the precharge driver 6.

Referring to FIG. 8, which is a plan view showing a mother substrate 1of a driver-integrated LCD according to a sixth preferred embodiment ofthe present invention, an electric shielding wire 10 is provided outsidethe input terminal area 7, so that static electricity generated at theinput terminal area 7 does not damage the drain driver 5 of the adjacentactive matrix substrate 2. This embodiment may be employed when the wirelayout cannot be easily changed or the wires 41, 42, 51, 52, 53, 61, 62cannot be easily arranged so as to pass close to and outside the draindriver 5.

Referring to FIG. 9, which is a plan view showing a mother substrate 1of a driver-integrated LCD according to a seventh preferred embodimentof the present invention, at the beginning of the film formationprocess, a dedicated region for an electric shielding wire 10 isprovided on the mother substrate 1 between adjacent active matrixsubstrates 2, which is then cut when finished active matrix substrates 2are separated. This embodiment may be employed when active matrixsubstrates 2 occupy a relatively small region on the mother substrate 1so that a sufficient region can be ensured for provision of an electricshielding wire 10.

In this embodiment, independent electric shielding wires do not remainin finished LCDs, so image display is not affected by the electricshielding wire.

Referring to FIG. 10, which is a plan view showing a mother substrate 1of a driver-integrated LCD according to an eighth preferred embodimentof the present invention, the input terminal area 7 is positioned 800 μmor more, and preferably 1800 μm or more, away from the precharge driver6 (a separation distance a) and the drain driver 5 of the adjacentactive matrix substrate 2 (a separation distance b).

The following table shows the frequency of defect occurrence to a mothersubstrate 1 relative to the smaller one of the separation distances aand b.

TABLE 1 Separation Distance (a, b) Defect Frequency (%)  700 μm 13.7% 800 μm  2.8% 1800 μm  0.1%

Referring to this table, it can be seen that, when the separationdistance a or b is 700 μm, defects will be caused to the prechargedriver 6 or the drain driver 5 of the adjacent active matrix substrate 2with high frequency, or 13.7%. The frequency drops significantly to 2.8%when the separation distance a or b is 800 μm, and further drops to 0.1%when the distance is 1800 μm, which is a value small enough that theeffect of discharged electricity from a charged input terminal area 7can almost be neglected. In view of yield and costs, defect frequencydue to the same cause needs to be suppressed below 1 to 2%, at best 3%.Therefore, according to the table, a driver must be situated, at theclosest, 800 μm or more, and preferably 1800 μm or more, away from theinput terminal area 7.

As described above, according to the present invention, a wire forprotection against static electricity can be provided at a relativelyearly manufacturing stage for a display apparatus substrate. As aresult, elements can be protected against static electricity generatedin the manufacturing process. This can resultantly increasemanufacturing yield.

What is claimed is:
 1. A display apparatus having a plurality of pixels,comprising on a substrate: a plurality of pixel electrodes correspondingto respective pixels among the plurality of pixels; a plurality ofdriving thin film transistors, each located outside of said plurality ofpixel electrodes and comprising a plurality of conductive layers, forcontrolling supplying of signal voltage to the plurality of pixelelectrodes; a plurality of input terminals for receiving a controlsignal for the signal voltage to be supplied to the plurality of drivingthin film transistors; and wires, at least some of said wires beingconnected between said plurality of driving thin film transistors andsaid plurality of input terminals for sending the signal voltage fromthe plurality of input terminals to the plurality of driving thin filmtransistors, wherein each of the wires includes a first conductive layerformed of the lowest conductive layer of the driving thin filmtransistor and a second conductive layer situated above the firstconductive layer and formed of other conductive layer of the drivingthin film transistor, at least a portion of one of said wires beinglocated near the peripheral area of the substrate and outside of saidplurality of driving thin film transistors to function as an electricshield for said plurality of driving thin film transistors.
 2. Thedisplay apparatus of claim 1, further comprising a plurality ofswitching thin film transistors located in a display area, and a drivingcircuit located outside of the display area for receiving signals fromthe wires, the driving circuit including the driving thin filmtransistors.
 3. The display apparatus of claim 2, wherein at least oneside of the driving circuit is adjacent a part of the wires.